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Mechanism of crack formation in strained SiGe(1 1 1) layers
https://tcu-ar.repo.nii.ac.jp/records/2000064
https://tcu-ar.repo.nii.ac.jp/records/2000064956a1d41-6e62-460b-88f8-001ea73e241d
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2024-01-19 | |||||
| タイトル | ||||||
| タイトル | Mechanism of crack formation in strained SiGe(1 1 1) layers | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | A1. Defects | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | A1. Surface structure | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | A3. Molecular beam epitaxy | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | B1. Germanium silicon alloys | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | B2. Semiconducting silicon compounds | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 著者 |
我妻, 勇哉
× 我妻, 勇哉× アラン, モハマド× 岡田, 和也× 金澤, 伶奈× 澤野, 憲太郎 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Strained SiGe layers are grown on Ge(1 1 1) and Ge-on-Si(1 1 1) substrates with and without forming mesa-patterning, where the Ge and Ge-on-Si(1 1 1) outside of the defined mesa-pattern area are etched down by various thicknesses. We find that high-density cracks are formed both inside and outside of the mesa-area and the cracks are connected across the mesa-boundary when the Ge layer partially remains outside of the mesa area (partially etched case). By contrast, the crack formation is completely suppressed when the Ge is fully etched, leaving the Si on the etched surface. These results mean that the cracks are initially generated in the SiGe layer grown on the Ge outside of the mesa-area and they propagate into the mesa-area, making the mesa-area covered with crack networks. In addition, since it is implied that the density of the crack generation sources is not high, the crack-free SiGe can be grown in the mesa area by fully removing the Ge layer outside of the mesa area. Therefore, the patterning method can provide very attractive templates highly applicable to strained SiGe-based optoelectronic and spintronic devices with superior performances. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Journal of Crystal Growth 巻 589, 号 126672, p. 1-4, ページ数 4, 発行日 2022-04-19 |
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| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0022-0248 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/j.jcrysgro.2022.126672 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | © 2022 Published by Elsevier B.V. | |||||
| 関連サイト | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.sciencedirect.com/science/article/am/pii/S0022024822001609 | |||||
| 関連名称 | https://www.sciencedirect.com/science/article/am/pii/S0022024822001609 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
