{"created":"2024-07-16T04:55:59.183246+00:00","id":2000145,"links":{},"metadata":{"_buckets":{"deposit":"71d81743-48c7-4d40-8e7a-79eab9b668f2"},"_deposit":{"created_by":10,"id":"2000145","owner":"10","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"2000145"},"status":"published"},"_oai":{"id":"oai:tcu-ar.repo.nii.ac.jp:02000145","sets":["22","22:23"]},"author_link":["122","211","219","103","123"],"control_number":"2000145","item_10001_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2024-03-23","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"108300","bibliographicNumberOfPages":"5","bibliographicPageEnd":"5","bibliographicPageStart":"1","bibliographicVolumeNumber":"177","bibliographic_titles":[{"bibliographic_title":"Materials Science in Semiconductor Processing","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We fabricate strained SiGe/Ge multiple quantum well (MQW) structures on Ge-on-Si(111). It is clearly found that high-density crystal cracks are generated in the MQW due to the accumulated tensile strain when the total thickness of the MQW increases beyond the critical thickness. In this study, we determine the critical thickness of the strained SiGe/Ge (111) MQW. Moreover, we demonstrate the mesa-patterning of the Ge-on-Si prior to the MQW growth can drastically suppress the crack formation, leading to the significant increase in the critical thickness. As a result, we find that room-temperature photoluminescence from the crack-suppressed MQW is highly enhanced. This indicates that the suppression of crack formation by the patterning method is very promising toward SiGe/Ge MQW embedded light-emitting device applications.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier Ltd.","subitem_publisher_language":"en"}]},"item_10001_relation_14":{"attribute_name":"item_10001_relation_14","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.mssp.2024.108300","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://www.sciencedirect.com/science/article/pii/S1369800124001963"}],"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.sciencedirect.com/science/article/pii/S1369800124001963","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2024 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).","subitem_rights_language":"en"}]},"item_10001_source_id_9":{"attribute_name":"item_10001_source_id_9","attribute_value_mlt":[{"subitem_source_identifier":"1369-8001","subitem_source_identifier_type":"PISSN"}]},"item_10001_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"金澤, 伶奈","creatorNameLang":"ja"},{"creatorName":"カネサワ, レイナ","creatorNameLang":"ja-Kana"},{"creatorName":"Kanesawa, Rena","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"122","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"菊岡, 柊也","creatorNameLang":"ja"},{"creatorName":"キクオカ, シュウヤ","creatorNameLang":"ja-Kana"},{"creatorName":"Kikuoka, Shuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"211","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"芝原, 夕夏","creatorNameLang":"ja"},{"creatorName":"シバハラ, ユウカ","creatorNameLang":"ja-Kana"},{"creatorName":"Shibahara, Yuka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"219","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"我妻, 勇哉","creatorNameLang":"ja"},{"creatorName":"ワガツマ, ユウヤ","creatorNameLang":"ja-Kana"},{"creatorName":"Wagatsuma, Youya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"103","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"澤野, 憲太郎","creatorNameLang":"ja"},{"creatorName":"サワノ, ケンタトウ","creatorNameLang":"ja-Kana"},{"creatorName":"Sawano, Kentarou","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"123","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fabrication of crack-free strained SiGe/Ge multiple quantum wells on  Ge-on-Si(111) by the patterning method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication of crack-free strained SiGe/Ge multiple quantum wells on  Ge-on-Si(111) by the patterning method","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"10","path":["22","23"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2024-07-19"},"publish_date":"2024-07-19","publish_status":"0","recid":"2000145","relation_version_is_last":true,"title":["Fabrication of crack-free strained SiGe/Ge multiple quantum wells on  Ge-on-Si(111) by the patterning method"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2025-02-04T05:20:39.537898+00:00"}