{"created":"2024-07-11T06:33:02.790160+00:00","id":2000136,"links":{},"metadata":{"_buckets":{"deposit":"6ba53394-47b0-43cc-b295-2df543382ae1"},"_deposit":{"created_by":10,"id":"2000136","owner":"10","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"2000136"},"status":"published"},"_oai":{"id":"oai:tcu-ar.repo.nii.ac.jp:02000136","sets":["22","22:23"]},"author_link":["123","211","122"],"control_number":"2000136","item_10001_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2024-03-14","bibliographicIssueDateType":"Issued"},"bibliographicNumberOfPages":"4","bibliographicPageEnd":"4","bibliographicPageStart":"1","bibliographicVolumeNumber":"176","bibliographic_titles":[{"bibliographic_title":"Materials Science in Semiconductor Processing","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Epitaxially grown Ge-on-Si(111) based vertical type light-emitting diodes (LEDs) including a single strained SiGe layer or strained SiGe/Ge multiple quantum wells (MQWs) as intrinsic active layers are fabricated and their electroluminescence (EL) properties are compared. It is found from their diode characteristics that off-leakage currents are highly suppressed by the strained SiGe insertion, and resultantly, markedly enhanced room-temperature EL emission is obtained for the SiGe/Ge MQWs LED compared to LED with only Ge active layer, indicating that the strained SiGe/Ge heterostructures are promising toward high efficiency light source in the Si photonics.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier Ltd.","subitem_publisher_language":"en"}]},"item_10001_relation_14":{"attribute_name":"item_10001_relation_14","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.mssp.2024.108299","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://www.sciencedirect.com/science/article/pii/S1369800124001951"}],"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.sciencedirect.com/science/article/pii/S1369800124001951","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2024 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).","subitem_rights_language":"en"}]},"item_10001_source_id_9":{"attribute_name":"item_10001_source_id_9","attribute_value_mlt":[{"subitem_source_identifier":"1369-8001","subitem_source_identifier_type":"PISSN"}]},"item_10001_version_type_20":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"澤野, 憲太郎","creatorNameLang":"ja"},{"creatorName":"サワノ, ケンタトウ","creatorNameLang":"ja-Kana"},{"creatorName":"Sawano, Kentarou","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"123","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"菊岡, 柊也","creatorNameLang":"ja"},{"creatorName":"キクオカ, シュウヤ","creatorNameLang":"ja-Kana"},{"creatorName":"Kikuoka, Shuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"211","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"金澤, 伶奈","creatorNameLang":"ja"},{"creatorName":"カネサワ, レイナ","creatorNameLang":"ja-Kana"},{"creatorName":"Kanesawa, Rena","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"122","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Enhancement of room temperature electroluminescence from strained  SiGe/Ge(111) multiple quantum wells light emitting diodes","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Enhancement of room temperature electroluminescence from strained  SiGe/Ge(111) multiple quantum wells light emitting diodes","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"10","path":["22","23"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2024-07-19"},"publish_date":"2024-07-19","publish_status":"0","recid":"2000136","relation_version_is_last":true,"title":["Enhancement of room temperature electroluminescence from strained  SiGe/Ge(111) multiple quantum wells light emitting diodes"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2025-02-04T05:06:06.026271+00:00"}